What is the thermal conductivity of SiO2?
W/m.K
Silica – Silicon Dioxide (SiO2)
| Property | Minimum Value (S.I.) | Units (S.I.) |
|---|---|---|
| Thermal Conductivity | 1.3 | W/m.K |
| Thermal Expansion | 0.55 | 10-6/K |
| Breakdown Potential | 25 | MV/m |
| Dielectric Constant | 3.6 |
What properties does SiO2 have because of its structure?
Chemical Properties of \[SiO_{2}\] Silicon dioxide is not a very reactive compound because the polarity of the molecule is zero. The ‘Si’ forms two double bonds with the oxygen. Therefore, it’s a very stable molecule. Moreover, it has high dielectric strength, so that it is used as an insulator and semiconductor.
Why is silicon dioxide used in semiconductors?
2.2. Silicon dioxide, SiO2, is an amorphous material used in microsystems as a dielectric in capacitors and transistors; as an insulator to isolate various electronic elements; and as a structural or sacrificial layer in many micromachining processes.
Is SiO2 a thermal conductor?
Unfortunately, the TC of SiO2 is about two orders of magnitude less than that of Si. Hence, even the influence of a very thin layer can be significant….The Thermal Conductivity of Silicon Dioxide.
| Thermal Conductivity of Silicon Dioxide | TC W/mK |
|---|---|
| Quartz c-axis | 11.7 |
| Thin Layer Values | |
| Intrinsic, thermally grown | 1.3 |
| Intrinsic, Ion beam sputtered | 1.1 |
What is SiO2 deposition rate in PECVD?
SiO 2 deposition rate of 400 nm/min is achieved at stage temperature of 80°C. SiO 2 film deposited at 120°C or 150°C showed minimum stress shift even 30 days after the deposition processing. This PECVD process with stable film stress can be applied for TSV passivation which has a critical challenge in bow compensation of thinned wafers.
What are the properties of SiO2?
SiO 2 has unique chemical and mechanical properties including excellent abrasion resistance, good electrical insulation and low thermal expansion and high thermal stability. For device fabrication, this material has been used for various purposes. SAMCO offers both Anode PECVD and Cathode PECVD process solutions for SiO 2 thin film deposition.
What is low-temperature PECVD?
As a pioneer of material processing technologies for device labs and fabs, Samco offers low-temperature PECVD process solutions. SiO 2 and SiN x films can be deposited at low temperatures (including under 80°C). Sample temperature can be managed depending on customer’s thermal budget limitations and request.
Why choose SAMCO’s cathode PECVD?
Samco’s Cathode PECVD enables high-speed deposition even in low temperature process. SiO 2 deposition rate of 400 nm/min is achieved at stage temperature of 80°C. SiO 2 film deposited at 120°C or 150°C showed minimum stress shift even 30 days after the deposition processing.
